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| BF420 transistor (npn) bf422 features power dissipation p cm: 0.83 w (tamb=25 ) collector current i cm: 0.1 a collector-base voltage v (br)cbo : BF420 300 v bf422 250 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage BF420 bf422 v cbo ic=100a , i e =0 300 250 v collector-emitter breakdown voltage BF420 bf422 v ceo i c = 1ma , i b =0 300 250 v emitter-base breakdown voltage v ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.01 a emitter cut-off current i ebo v eb =5v, i c =0 0.05 a dc current gain h fe(1) v ce =20v, i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30 ma, i b = 5ma 0.6 v transition frequency f t v ce =10v, i c = 10ma f = 100mhz 60 mhz 1 2 3 to-92 1. emitter 2. collector 3. base b f420/bf422 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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